| Project |
| Acronym: |
HCBT2007 |
| Name: |
A New Horizontal Current Bipolar Transistor (HCBT) for 0.18μm BiCMOS Integration
|
| Project status: |
From: 2006-12-10
To: 2007-12-11
(Completed)
|
| Contract number: |
|
| Action line: |
|
| Type (Programme): |
INDUSTRY |
| Instrument: |
|
| Project cost: |
- |
| Project funding: |
- |
| Project coordinator |
| Organisation Name: |
Asahi Kasei EMD Co., Ltd. |
| Organisation adress: |
1-23-7 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023 |
| Organisation country: |
Japan |
| Contact person name: |
|
| Contact person email: |
|
| Croatian partner |
| Organisation name: |
Fakultet elektrotehnike i računarstva |
| Organisation address: |
ZEMRIS, Unska 3, 10000 Zagreb |
| Contact person name: |
Tomislav Suligoj
|
| Contact person tel: |
| +385 1 6129898 |
Contact person fax: |
+385 1 6129653 |
|
| Contact person e-mail: |
Email |
| Partners |
|
|
| Short description of project |
| The goal of the project is to develop a novel bipolar transistor structure, which can be integrated with 0.18μm CMOS process. A novel bipolar device is based on the Horizontal Current Bipolar Transistor (HCBT) invented at the Faculty of Electrical Engineering and Computing, University of Zagreb. A new HCBT structure should make it possible to realize a low-cost, high-performance, very flexible BiCMOS technology platform. |
| Short description of the task performed by Croatian partner |
| Design of the the novel Horizontal Current Bipolar Transistor (HCBT) Technology and integration with 0.18um CMOS process. Solving the critical process steps. Process and device simulation. Data interpretation and modeling.
|
Ovo web sjedište koristi tehnologiju "kolačića" (eng. cookie) da bi se korisnicima prikazao dinamičan i personaliziran sadržaj, te su oni nužni za ispravan rad. Ako nastavite pregledavati ove stranice, kolačići će biti korišteni u suradnji s vašim preglednikom Weba.
login
