PROJECTS
   

Project
Acronym: HCBT2007 
Name: A New Horizontal Current Bipolar Transistor (HCBT) for 0.18μm BiCMOS Integration 
Project status: From: 2006-12-10 To: 2007-12-11 (Completed)
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Type (Programme): INDUSTRY 
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Project cost: -
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Project coordinator
Organisation Name: Asahi Kasei EMD Co., Ltd. 
Organisation adress: 1-23-7 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023 
Organisation country: Japan 
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Croatian partner
Organisation name: Fakultet elektrotehnike i računarstva 
Organisation address: ZEMRIS, Unska 3, 10000 Zagreb 
Contact person name: Tomislav Suligoj
Contact person tel:
+385 1 6129898  Contact person fax: +385 1 6129653 
Contact person e-mail: Email 
Partners
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Short description of project
The goal of the project is to develop a novel bipolar transistor structure, which can be integrated with 0.18μm CMOS process. A novel bipolar device is based on the Horizontal Current Bipolar Transistor (HCBT) invented at the Faculty of Electrical Engineering and Computing, University of Zagreb. A new HCBT structure should make it possible to realize a low-cost, high-performance, very flexible BiCMOS technology platform. 
Short description of the task performed by Croatian partner
Design of the the novel Horizontal Current Bipolar Transistor (HCBT) Technology and integration with 0.18um CMOS process. Solving the critical process steps. Process and device simulation. Data interpretation and modeling.  


   

Design by: M. Mačinković

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