| Project |
| Acronym: |
|
| Name: |
PureB layer analysis with Raman spectroscopy, ellipsometry, simulation and electrical measurements
|
| Project status: |
From: 2012-01-01
To: 2012-12-31
(Completed)
|
| Type (Programme): |
BILAT |
| Project funding: |
- |
| International partner |
| Organisation Name: |
Delft University of Technology |
| Organisation adress: |
Feldmannweg 17, 2628 CT Delft |
| Organisation country: |
Nizozemska |
| Contact person name: |
|
| Contact person email: |
|
| Croatian partner |
| Organisation name: |
Fakultet elektrotehnike i računarstva |
| Organisation address: |
Zavod za elektroniku, mikroelektroniku, računalne i inteligentne sustave, Unska 3, 10000 Zagreb |
| Contact person name: |
Prof. dr. sc. Tomislav Suligoj
|
| Contact person tel: |
|
| Contact person e-mail: |
Email |
| Short description of project |
| Photodetectors with pure boron (PureB) exhibit the highest sensitivity for the signals with small absorption depth in silicon. The properties of PureB layer must be analyzed with Raman spectroscopy, ellipsometry, simulation and electrical measurements to determine its electrical and optical properties.
|
| Short description of the task performed by Croatian partner |
| PureB layer analysis with Raman spectroscopy, ellipsometry, simulation and electrical measurements.
|
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