| Project |
| Acronym: |
|
| Name: |
Simulation software for characterization of carrier transport in integrated semi-metallic thin films
|
| Project status: |
From: 2009-09-01
To: 2010-09-01
(Completed)
|
| Type (Programme): |
BILAT |
| Project funding: |
- |
| International partner |
| Organisation Name: |
Delft University of Technology |
| Organisation adress: |
Feldmannweg 17, 2628 CT Delft |
| Organisation country: |
Nizozemska |
| Contact person name: |
|
| Contact person email: |
|
| Croatian partner |
| Organisation name: |
Fakultet elektrotehnike i računarstva |
| Organisation address: |
ZEMRIS, Unska 3, 10000 Zagreb |
| Contact person name: |
Tomislav Suligoj
|
| Contact person tel: |
| +385 1 6129898 |
Contact person fax: |
+385 1 6129653 |
|
| Contact person e-mail: |
Email |
| Short description of project |
| Deposition of semiconductor dopants on silicon surface can be used as a source of diffusion and very shallow junctions can be obtained. Since such layer acts as a contact of the diffused layer, the carrier transport has to be studied throroughly. Specific properties of both minorty and majorty carriers in such layers has been observed and further analyses has to be performed. |
| Short description of the task performed by Croatian partner |
| Study of transport properties of electrons and holes in semi-metallic thin films. Simulation of diffusion from deposited layer into silicon wiwthin a range of process conditions (temperature, time, concentration). Simulation of device performance with respect of the achieved diffused doping profiles. |
Ovo web sjedište koristi tehnologiju "kolačića" (eng. cookie) da bi se korisnicima prikazao dinamičan i personaliziran sadržaj, te su oni nužni za ispravan rad. Ako nastavite pregledavati ove stranice, kolačići će biti korišteni u suradnji s vašim preglednikom Weba.
login
