Project |
Acronym: |
HCBT2007 |
Name: |
A New Horizontal Current Bipolar Transistor (HCBT) for 0.18μm BiCMOS Integration
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Project status: |
From: 2006-12-10
To: 2007-12-11
(Completed)
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Contract number: |
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Action line: |
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Type (Programme): |
INDUSTRY |
Instrument: |
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Project cost: |
- |
Project funding: |
- |
Project coordinator |
Organisation Name: |
Asahi Kasei EMD Co., Ltd. |
Organisation adress: |
1-23-7 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023 |
Organisation country: |
Japan |
Contact person name: |
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Contact person email: |
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Croatian partner |
Organisation name: |
Fakultet elektrotehnike i računarstva |
Organisation address: |
ZEMRIS, Unska 3, 10000 Zagreb |
Contact person name: |
Tomislav Suligoj
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Contact person tel: |
+385 1 6129898 |
Contact person fax: |
+385 1 6129653 |
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Contact person e-mail: |
Email |
Partners |
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Short description of project |
The goal of the project is to develop a novel bipolar transistor structure, which can be integrated with 0.18μm CMOS process. A novel bipolar device is based on the Horizontal Current Bipolar Transistor (HCBT) invented at the Faculty of Electrical Engineering and Computing, University of Zagreb. A new HCBT structure should make it possible to realize a low-cost, high-performance, very flexible BiCMOS technology platform. |
Short description of the task performed by Croatian partner |
Design of the the novel Horizontal Current Bipolar Transistor (HCBT) Technology and integration with 0.18um CMOS process. Solving the critical process steps. Process and device simulation. Data interpretation and modeling.
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